SCT20N120AG
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 20A HIP247
$21.24
Available to order
Reference Price (USD)
1+
$21.24000
500+
$21.0276
1000+
$20.8152
1500+
$20.6028
2000+
$20.3904
2500+
$20.178
Exquisite packaging
Discount
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Enhance your circuit performance with SCT20N120AG, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCT20N120AG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 239mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 153W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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