BSP129L6327
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$0.27
Available to order
Reference Price (USD)
1+
$0.27000
500+
$0.2673
1000+
$0.2646
1500+
$0.2619
2000+
$0.2592
2500+
$0.2565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents BSP129L6327, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSP129L6327 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 240 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
- Vgs(th) (Max) @ Id: 1V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
Related Products
Vishay Siliconix
SIR826DP-T1-GE3
Vishay Siliconix
SIHP12N50C-E3
Nexperia USA Inc.
BUK9M5R0-40HX
Toshiba Semiconductor and Storage
TPH3R003PL,LQ
onsemi
NVD6416ANT4G-VF01
Vishay Siliconix
SQ3481EV-T1_BE3
Torex Semiconductor Ltd
XP162A11C0PR-G
Rohm Semiconductor
QS5U34TR
Renesas Electronics America Inc
HAT1125HWS-E
Infineon Technologies