SCT2080KEHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247N
$41.78
Available to order
Reference Price (USD)
1+
$31.65000
10+
$29.19300
25+
$27.88080
100+
$24.92860
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
SCT2080KEHRC11 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, SCT2080KEHRC11 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id: 4V @ 4.4mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
onsemi
BS170-D74Z
onsemi
NVTFS4C06NWFTAG
Vishay Siliconix
SI9433BDY-T1-GE3
Diodes Incorporated
DMP25H18DLFDE-7
Infineon Technologies
IPP120P04P4L03AKSA1
Rohm Semiconductor
RAL025P01TCR
National Semiconductor
CSD18503KCS
Goford Semiconductor
G20P08K
Sanken
GKI04048
Nexperia USA Inc.