RAL025P01TCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 12V 2.5A TUMT6
$0.44
Available to order
Reference Price (USD)
3,000+
$0.09900
6,000+
$0.09300
15,000+
$0.08700
30,000+
$0.08400
Exquisite packaging
Discount
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Discover RAL025P01TCR, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
- Vgs (Max): -8V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 320mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
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