SCT040H65G3AG
STMicroelectronics
STMicroelectronics
AUTOMOTIVE-GRADE SILICON CARBIDE
$16.17
Available to order
Reference Price (USD)
1+
$16.17000
500+
$16.0083
1000+
$15.8466
1500+
$15.6849
2000+
$15.5232
2500+
$15.3615
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SCT040H65G3AG by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SCT040H65G3AG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 4.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 39.5 nC @ 18 V
- Vgs (Max): +18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 221W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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