SIHF9520S-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 100V 6.8A D2PAK
$0.52
Available to order
Reference Price (USD)
1+
$0.51975
500+
$0.5145525
1000+
$0.509355
1500+
$0.5041575
2000+
$0.49896
2500+
$0.4937625
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SIHF9520S-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SIHF9520S-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Alpha & Omega Semiconductor Inc.
AOB260L
Fairchild Semiconductor
FQPF6P25
onsemi
2N7002WT1G
Rohm Semiconductor
RD3U041AAFRATL
onsemi
NVMFS4C01NWFT1G
IXYS
IXTH24N65X2
Panjit International Inc.
PJQ5466A1_R2_00001
Diodes Incorporated
DMP2160UWQ-7
STMicroelectronics
STP240N10F7
Fairchild Semiconductor