SA2T18H450W19SR6
NXP Semiconductors
NXP Semiconductors
A2T18H450 - AIRFAST RF POWER LDM
$197.60
Available to order
Reference Price (USD)
1+
$197.60000
500+
$195.624
1000+
$193.648
1500+
$191.672
2000+
$189.696
2500+
$187.72
Exquisite packaging
Discount
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Upgrade your RF designs with NXP Semiconductors's SA2T18H450W19SR6 MOSFETs, engineered for precision and efficiency. Key features include ultra-fast switching, minimal power loss, and robust ESD protection, perfect for high-frequency applications. From aerospace to IoT devices, these transistors deliver unmatched performance. Ready to optimize your circuit? Submit your inquiry now and our team will assist you promptly!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS (Dual)
- Frequency: 1.805GHz ~ 1.88GHz
- Gain: 16.6dB
- Voltage - Test: 30 V
- Current Rating (Amps): 10µA
- Noise Figure: -
- Current - Test: 800 mA
- Power - Output: 89W
- Voltage - Rated: 65 V
- Package / Case: NI-1230S-4S4S
- Supplier Device Package: NI-1230S-4S4S
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