A3G26H200W17SR3
NXP USA Inc.
NXP USA Inc.
AIRFAST RF POWER GAN TRANSISTOR,
$137.43
Available to order
Reference Price (USD)
1+
$137.42660
500+
$136.052334
1000+
$134.678068
1500+
$133.303802
2000+
$131.929536
2500+
$130.55527
Exquisite packaging
Discount
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The A3G26H200W17SR3 series by NXP USA Inc. sets new benchmarks in RF transistor technology. With patented noise-reduction architecture and gold metallization for corrosion resistance, these MOSFETs dominate in scientific research and satellite communications. Their plug-and-play compatibility simplifies integration. Elevate your design get a personalized quote within 24 hours!
Specifications
- Product Status: Active
- Transistor Type: -
- Frequency: 2.496GHz ~ 2.69GHz
- Gain: 14.2dB
- Voltage - Test: 48 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 120 mA
- Power - Output: 34W
- Voltage - Rated: 125 V
- Package / Case: NI-780S-4S2S
- Supplier Device Package: NI-780S-4S2S
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