Shopping cart

Subtotal: $0.00

S4PMHM3_A/H

Vishay General Semiconductor - Diodes Division
S4PMHM3_A/H Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 4A TO277A
$0.58
Available to order
Reference Price (USD)
3,000+
$0.21360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Taiwan Semiconductor Corporation

SFS1608GH

Microchip Technology

JAN1N5616US

Vishay General Semiconductor - Diodes Division

BAS170WS-G3-18

Vishay General Semiconductor - Diodes Division

US1M-M3/5AT

Rohm Semiconductor

RR601BM4STL

Vishay General Semiconductor - Diodes Division

VS-SD400R20PC

Comchip Technology

CGRKM4007-HF

WeEn Semiconductors

WNSC6D16650B6J

Solid State Inc.

70HFR10

Micro Commercial Co

SK36A-TP

Top