RV2C014BCT2CL
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 20V 700MA DFN1006-3
$0.42
Available to order
Reference Price (USD)
8,000+
$0.09690
16,000+
$0.08835
24,000+
$0.08265
56,000+
$0.07980
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with RV2C014BCT2CL, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RV2C014BCT2CL meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: 3-XFDFN
Related Products
Nexperia USA Inc.
PMV65ENEAR
STMicroelectronics
STP23N80K5
Vishay Siliconix
SI2324DS-T1-GE3
Infineon Technologies
IAUA120N04S5N014AUMA1
Rohm Semiconductor
R6535KNZ4C13
Diodes Incorporated
DMG3402LQ-7
Vishay Siliconix
SQ4435EY-T1_BE3
Infineon Technologies
IPP60R040C7XKSA1
Vishay Siliconix
SI4062DY-T1-GE3
STMicroelectronics