IPP60R040C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 50A TO220-3
$15.60
Available to order
Reference Price (USD)
1+
$13.37000
10+
$12.02900
100+
$9.89010
500+
$8.28630
1,000+
$7.21710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPP60R040C7XKSA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPP60R040C7XKSA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SI4062DY-T1-GE3
STMicroelectronics
STI33N65M2
onsemi
NVMFS5C628NT1G
STMicroelectronics
STD4NK80ZT4
Toshiba Semiconductor and Storage
SSM3J118TU(TE85L)
Infineon Technologies
SPD50P03LGBTMA1
Panjit International Inc.
PJL9452A_R2_00001
Vishay Siliconix
IRF740LCPBF
Infineon Technologies
IPD60R360CFD7ATMA1
Fairchild Semiconductor