RSQ035N06HZGTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 3.5A TSMT6
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
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Discover high-performance RSQ035N06HZGTR from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RSQ035N06HZGTR delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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