CPC5603CTR
IXYS Integrated Circuits Division
IXYS Integrated Circuits Division
MOSFET N-CH 415V 5MA SOT-223
$1.02
Available to order
Reference Price (USD)
1,000+
$0.36800
2,000+
$0.33350
5,000+
$0.32200
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose CPC5603CTR by IXYS Integrated Circuits Division. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with CPC5603CTR inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 415 V
- Current - Continuous Drain (Id) @ 25°C: 5mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.35V
- Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 0 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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