RSQ015P10HZGTR
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 100V 1.5A TSMT6
$0.85
Available to order
Reference Price (USD)
1+
$0.85000
500+
$0.8415
1000+
$0.833
1500+
$0.8245
2000+
$0.816
2500+
$0.8075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance RSQ015P10HZGTR from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RSQ015P10HZGTR delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 470mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 950mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSMT6 (SC-95)
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Rectron USA
RM2306E
onsemi
FQB7N60TM
IXYS
IXFH120N30X3
onsemi
FQPF7N60
Diodes Incorporated
DMNH4011SK3Q-13
Vishay Siliconix
SQ3419EV-T1_GE3
Diodes Incorporated
DMTH41M8SPSQ-13
STMicroelectronics
STP14NK50ZFP
onsemi
NTMFS4707NT1G
IXYS