RQA0004LXAQS#H1
Renesas
Renesas
RQA0004LXAQS - N CHANNEL MOSFET
$0.47
Available to order
Reference Price (USD)
1+
$0.46905
500+
$0.4643595
1000+
$0.459669
1500+
$0.4549785
2000+
$0.450288
2500+
$0.4455975
Exquisite packaging
Discount
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Discover high-performance RQA0004LXAQS#H1 from Renesas, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RQA0004LXAQS#H1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 900mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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