IPN50R3K0CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 2.6A SOT223
$0.57
Available to order
Reference Price (USD)
3,000+
$0.16842
6,000+
$0.15918
15,000+
$0.14994
30,000+
$0.13885
75,000+
$0.13423
Exquisite packaging
Discount
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Experience the power of IPN50R3K0CEATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IPN50R3K0CEATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
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