RQ3E180AJTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 30V 18A MIDDLE POWER MOSFET:
$0.61
Available to order
Reference Price (USD)
1+
$0.60550
500+
$0.599445
1000+
$0.59339
1500+
$0.587335
2000+
$0.58128
2500+
$0.575225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RQ3E180AJTB1, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 11mA
- Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMTH6009LPSQ-13
Rohm Semiconductor
R6520ENXC7G
onsemi
FDMS4D4N08C
Diodes Incorporated
DMNH6042SPSQ-13
Infineon Technologies
IPDQ60R010S7XTMA1
Vishay Siliconix
SQJ433EP-T1_GE3
Diodes Incorporated
DMT35M4LFVW-13
Diodes Incorporated
DMP3011SFVW-7
onsemi
NVMFS5H610NLT1G
Harris Corporation