IPDQ60R010S7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW PG-HDSOP-22
$36.44
Available to order
Reference Price (USD)
1+
$36.44000
500+
$36.0756
1000+
$35.7112
1500+
$35.3468
2000+
$34.9824
2500+
$34.618
Exquisite packaging
Discount
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Optimize your electronic systems with IPDQ60R010S7XTMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IPDQ60R010S7XTMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
- Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11987 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 694W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HDSOP-22-1
- Package / Case: 22-PowerBSOP Module
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