RQ3E100GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 10A 8HSMT
$0.47
Available to order
Reference Price (USD)
3,000+
$0.13860
6,000+
$0.13020
15,000+
$0.12180
30,000+
$0.11760
Exquisite packaging
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Discover RQ3E100GNTB, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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