RQ3E080GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 8A 8HSMT
$0.56
Available to order
Reference Price (USD)
3,000+
$0.12375
6,000+
$0.11625
15,000+
$0.10875
30,000+
$0.10500
Exquisite packaging
Discount
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Enhance your circuit performance with RQ3E080GNTB, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RQ3E080GNTB for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16.7mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 15W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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