NTBGS1D5N06C
onsemi
onsemi
POWER MOSFET, 60 V, 1.62 M?, 267
$6.41
Available to order
Reference Price (USD)
1+
$6.41000
500+
$6.3459
1000+
$6.2818
1500+
$6.2177
2000+
$6.1536
2500+
$6.0895
Exquisite packaging
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Enhance your circuit performance with NTBGS1D5N06C, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTBGS1D5N06C for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 1.55mOhm @ 64A, 12V
- Vgs(th) (Max) @ Id: 4V @ 318µA
- Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 211W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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