RM4P20ES6
Rectron USA
Rectron USA
MOSFET P-CH 20V 3A/4.1A SOT23-6
$0.07
Available to order
Reference Price (USD)
1+
$0.06900
500+
$0.06831
1000+
$0.06762
1500+
$0.06693
2000+
$0.06624
2500+
$0.06555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RM4P20ES6 by Rectron USA. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RM4P20ES6 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
Related Products
Vishay Siliconix
SQS482EN-T1_GE3
Vishay Siliconix
SIHP5N50D-E3
Infineon Technologies
IRL3803STRRPBF
Vishay Siliconix
SISS26LDN-T1-GE3
Fairchild Semiconductor
FDD2570
Vishay Siliconix
SQ4401EY-T1_BE3
Diodes Incorporated
DMN24H3D5L-13
Renesas Electronics America Inc
2SK4078-ZK-E1-AY
Diodes Incorporated
DMT68M8LFV-13
Infineon Technologies