DMT68M8LFV-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 54.1A PWRDI3333
$0.32
Available to order
Reference Price (USD)
1+
$0.31661
500+
$0.3134439
1000+
$0.3102778
1500+
$0.3071117
2000+
$0.3039456
2500+
$0.3007795
Exquisite packaging
Discount
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Optimize your electronic systems with DMT68M8LFV-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT68M8LFV-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
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