RM2P60S2
Rectron USA
Rectron USA
MOSFET P-CHANNEL 60V 1.9A SOT23
$0.04
Available to order
Reference Price (USD)
1+
$0.03900
500+
$0.03861
1000+
$0.03822
1500+
$0.03783
2000+
$0.03744
2500+
$0.03705
Exquisite packaging
Discount
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Boost your electronic applications with RM2P60S2, a reliable Transistors - FETs, MOSFETs - Single by Rectron USA. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RM2P60S2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 215mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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