IPW65R070C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 53.5A TO247-3
$12.87
Available to order
Reference Price (USD)
1+
$11.02000
10+
$9.92100
240+
$8.15750
720+
$6.83467
1,200+
$5.95278
Exquisite packaging
Discount
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IPW65R070C6FKSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IPW65R070C6FKSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 17.6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.76mA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 391W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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