RM140N82T2
Rectron USA
Rectron USA
MOSFET N-CH 82V 140A TO220-3
$0.54
Available to order
Reference Price (USD)
1+
$0.54000
500+
$0.5346
1000+
$0.5292
1500+
$0.5238
2000+
$0.5184
2500+
$0.513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RM140N82T2, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RM140N82T2 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 82 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 220W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
2SK1934-E
Vishay Siliconix
SQJQ184ER-T1_GE3
onsemi
NTD4806NA-1G
IXYS
IXFK360N15T2
Goford Semiconductor
G35N02K
Alpha & Omega Semiconductor Inc.
AON7506
Infineon Technologies
IRFS7762TRLPBF
onsemi
NTB6412ANG
Nexperia USA Inc.
PMN230ENEAX
Fairchild Semiconductor