RJP60D0DPK-01#T0
Renesas
Renesas
RJH60D0 - INSULATED GATE BIPOLAR
$2.07
Available to order
Reference Price (USD)
1+
$2.06958
500+
$2.0488842
1000+
$2.0281884
1500+
$2.0074926
2000+
$1.9867968
2500+
$1.966101
Exquisite packaging
Discount
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Choose RJP60D0DPK-01#T0 Single IGBTs by Renesas for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Renesas's reputation for quality makes RJP60D0DPK-01#T0 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
- Power - Max: 140 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 35ns/90ns
- Test Condition: 300V, 22A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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