RBN25H125S1FPQ-A0#CB0
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$6.35
Available to order
Reference Price (USD)
1+
$6.35000
500+
$6.2865
1000+
$6.223
1500+
$6.1595
2000+
$6.096
2500+
$6.0325
Exquisite packaging
Discount
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Optimize power control with RBN25H125S1FPQ-A0#CB0 Single IGBTs from Renesas Electronics America Inc, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Renesas Electronics America Inc ensures RBN25H125S1FPQ-A0#CB0 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.34V @ 15V, 25A
- Power - Max: 223 W
- Switching Energy: 1.1mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 19ns/109ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 102 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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