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RJM0306JSP-01#J0

Renesas Electronics America Inc
RJM0306JSP-01#J0 Preview
Renesas Electronics America Inc
MOSFET 2N/2P-CH 30V 3.5A 8-SOP
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Specifications

  • Product Status: Active
  • FET Type: 2 N and 2 P-Channel (Half Bridge)
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
  • Power - Max: 2.2W
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP

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