ZXMN6A11DN8TC
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 2.5A 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The ZXMN6A11DN8TC by Diodes Incorporated is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Diodes Incorporated s ZXMN6A11DN8TC be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
- Power - Max: 1.8W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
Related Products
Infineon Technologies
IRF7506TR
Infineon Technologies
IRF7316TR
Diodes Incorporated
DMN3033LSDQ-13
Taiwan Semiconductor Corporation
TSM9933DCS RLG
Fairchild Semiconductor
FDS8949-F085
Vishay Siliconix
SI4542DY-T1-E3
Diodes Incorporated
ZVN4206NTC
Infineon Technologies
IRF7316PBF
Vishay Siliconix
SI1912EDH-T1-E3
Micro Commercial Co