RJK03E1DNS-00#J5
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$1.01
Available to order
Reference Price (USD)
1+
$1.01000
500+
$0.9999
1000+
$0.9898
1500+
$0.9797
2000+
$0.9696
2500+
$0.9595
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK03E1DNS-00#J5 by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK03E1DNS-00#J5 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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