RS1E350BNTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 30V 80A POWER MOSFET: RS1E35
$1.34
Available to order
Reference Price (USD)
1+
$1.34477
500+
$1.3313223
1000+
$1.3178746
1500+
$1.3044269
2000+
$1.2909792
2500+
$1.2775315
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with RS1E350BNTB1, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RS1E350BNTB1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMT10H9M9SCT
Rohm Semiconductor
R6030KNXC7G
Renesas Electronics America Inc
RJK2017DPP-M0#T2
Renesas Electronics America Inc
RJK6024DPD-00#J2
IXYS
IXTY1N80P-TRL
onsemi
NVTFS024N06CTAG
onsemi
NDCTR10120A
Goford Semiconductor
2302
Micro Commercial Co
SI3407HE3-TP
Micro Commercial Co