RJK0216DPA-00#J53
Renesas Electronics America Inc
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
$1.18
Available to order
Reference Price (USD)
1+
$1.18000
500+
$1.1682
1000+
$1.1564
1500+
$1.1446
2000+
$1.1328
2500+
$1.121
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Renesas Electronics America Inc s RJK0216DPA-00#J53, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for RJK0216DPA-00#J53.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 15A, 32A
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 10V
- Power - Max: 10W, 20W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-WFDFN
- Supplier Device Package: 8-DFN (5x6)
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