DMNH6035SPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V-60V POWERDI506
$0.68
Available to order
Reference Price (USD)
1+
$0.67914
500+
$0.6723486
1000+
$0.6655572
1500+
$0.6587658
2000+
$0.6519744
2500+
$0.645183
Exquisite packaging
Discount
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Discover high-performance DMNH6035SPDWQ-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMNH6035SPDWQ-13 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 25V
- Power - Max: 2.4W (Ta), 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type R)
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