RJH65D27BDPQ-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 100A TO247A
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The RJH65D27BDPQ-A0#T2 Single IGBT from Renesas Electronics America Inc delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Renesas Electronics America Inc's commitment to innovation ensures RJH65D27BDPQ-A0#T2 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
- Power - Max: 375 W
- Switching Energy: 1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 175 nC
- Td (on/off) @ 25°C: 20ns/165ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 80 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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