HGT1S7N60B3DS
Harris Corporation
Harris Corporation
14 A, 600 V, UFS N-CHANNEL IGBT
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Upgrade your power electronics with HGT1S7N60B3DS Single IGBTs by Harris Corporation, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Harris Corporation for top-quality components that meet global standards. Request a quote now to learn more about how HGT1S7N60B3DS can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 160µJ (on), 120µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 26ns/130ns
- Test Condition: 480V, 7A, 50Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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