RJH1DF7RDPQ-80#T2
Renesas
Renesas
RJH1DF7 - INSULATED GATE BIPOLAR
$5.17
Available to order
Reference Price (USD)
1+
$5.16879
500+
$5.1171021
1000+
$5.0654142
1500+
$5.0137263
2000+
$4.9620384
2500+
$4.9103505
Exquisite packaging
Discount
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Choose RJH1DF7RDPQ-80#T2 Single IGBTs by Renesas for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Renesas's reputation for quality makes RJH1DF7RDPQ-80#T2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
- Power - Max: 250 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: 58ns/144ns
- Test Condition: 600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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