MMIX1G120N120A3V1
IXYS
IXYS
IGBT 1200V 220A 400W SMPD
$59.04
Available to order
Reference Price (USD)
20+
$49.04550
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power electronics with MMIX1G120N120A3V1 Single IGBTs by IXYS, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust IXYS for top-quality components that meet global standards. Request a quote now to learn more about how MMIX1G120N120A3V1 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 220 A
- Current - Collector Pulsed (Icm): 700 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
- Power - Max: 400 W
- Switching Energy: 10mJ (on), 33mJ (off)
- Input Type: Standard
- Gate Charge: 420 nC
- Td (on/off) @ 25°C: 40ns/490ns
- Test Condition: 960V, 100A, 1Ohm, 15V
- Reverse Recovery Time (trr): 700 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-PowerSMD, 21 Leads
- Supplier Device Package: 24-SMPD
Related Products
Fairchild Semiconductor
FGBS3040E1-SN00390
Harris Corporation
HGTH20N50EID
Harris Corporation
HGTG40N60C3
Infineon Technologies
IKWH30N65WR5XKSA1
onsemi
NGTB20N120IHTG
Toshiba Semiconductor and Storage
GT20J341,S4X(S
Fairchild Semiconductor
FGPF70N30TRDTU
IXYS
MMIX1Y82N120C3H1
Harris Corporation
HGTD8P50G1
STMicroelectronics