RJ1L12BGNTLL
Rohm Semiconductor
Rohm Semiconductor
NCH 60V 120A POWER MOSFET : RJ1L
$7.08
Available to order
Reference Price (USD)
1+
$7.08000
500+
$7.0092
1000+
$6.9384
1500+
$6.8676
2000+
$6.7968
2500+
$6.726
Exquisite packaging
Discount
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Experience the power of RJ1L12BGNTLL, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RJ1L12BGNTLL is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 192W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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