FDMT800120DC-22897
onsemi
onsemi
FET 120V 4.2 MOHM PQFN88
$4.35
Available to order
Reference Price (USD)
1+
$4.35000
500+
$4.3065
1000+
$4.263
1500+
$4.2195
2000+
$4.176
2500+
$4.1325
Exquisite packaging
Discount
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FDMT800120DC-22897 by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FDMT800120DC-22897 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-Dual Cool™88
- Package / Case: 8-PowerVDFN
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