RGW80TS65EHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$8.02
Available to order
Reference Price (USD)
1+
$8.02000
500+
$7.9398
1000+
$7.8596
1500+
$7.7794
2000+
$7.6992
2500+
$7.619
Exquisite packaging
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Upgrade your power electronics with RGW80TS65EHRC11 Single IGBTs by Rohm Semiconductor, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Rohm Semiconductor for top-quality components that meet global standards. Request a quote now to learn more about how RGW80TS65EHRC11 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 214 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 43ns/148ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 86 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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