RGW80TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$7.33
Available to order
Reference Price (USD)
1+
$7.33000
500+
$7.2567
1000+
$7.1834
1500+
$7.1101
2000+
$7.0368
2500+
$6.9635
Exquisite packaging
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The RGW80TS65DHRC11 Single IGBT by Rohm Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Rohm Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
- Power - Max: 214 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 110 nC
- Td (on/off) @ 25°C: 42ns/148ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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