RFP45N06LE
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.64
Available to order
Reference Price (USD)
1+
$0.64000
500+
$0.6336
1000+
$0.6272
1500+
$0.6208
2000+
$0.6144
2500+
$0.608
Exquisite packaging
Discount
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Enhance your circuit performance with RFP45N06LE, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RFP45N06LE for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 45A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
