2SK4150TZ-E
Renesas
Renesas
2SK4150TZ - N-CHANNEL POWER MOSF
$0.58
Available to order
Reference Price (USD)
1+
$0.58374
500+
$0.5779026
1000+
$0.5720652
1500+
$0.5662278
2000+
$0.5603904
2500+
$0.554553
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose 2SK4150TZ-E by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with 2SK4150TZ-E inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 5.7Ohm @ 200mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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