RFG50N05
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$4.82
Available to order
Reference Price (USD)
1+
$4.82000
500+
$4.7718
1000+
$4.7236
1500+
$4.6754
2000+
$4.6272
2500+
$4.579
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RFG50N05, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RFG50N05 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250nA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 132W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Renesas Electronics America Inc
RJK03P9DPA-WS#J5A
Infineon Technologies
IPI70R950CEXKSA1
Infineon Technologies
IPBE65R115CFD7AATMA1
Harris Corporation
IRF244
Diodes Incorporated
DMT6030LFCL-7
onsemi
NVTYS029N08HLTWG
Infineon Technologies
BSF083N03LQG
Renesas Electronics America Inc
N0607N-ZK-E1-AY
Diodes Incorporated
DMT10H9M9SSS-13
Infineon Technologies