IPBE65R115CFD7AATMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE_COOLMOS PG-TO263-7
$5.22
Available to order
Reference Price (USD)
1+
$5.22280
500+
$5.170572
1000+
$5.118344
1500+
$5.066116
2000+
$5.013888
2500+
$4.96166
Exquisite packaging
Discount
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Discover high-performance IPBE65R115CFD7AATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPBE65R115CFD7AATMA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 114W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-11
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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