RFD3055LESM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 11A TO252AA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with RFD3055LESM, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust RFD3055LESM for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 107mOhm @ 8A, 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NTMS4503NR2
Infineon Technologies
BSB019N03LX G
Vishay Siliconix
IRFBC40STRR
onsemi
FQU12N20TU
STMicroelectronics
STH185N10F3-6
NXP USA Inc.
BUK9Y9R9-80E,115
Renesas Electronics America Inc
RJK0354DSP-00#J0
Infineon Technologies
BSS84PW L6327
Texas Instruments
TPIC2322LD
Infineon Technologies