STH185N10F3-6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
$0.00
Available to order
Reference Price (USD)
1,000+
$3.09497
2,000+
$2.95722
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STH185N10F3-6, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STH185N10F3-6 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Related Products
NXP USA Inc.
BUK9Y9R9-80E,115
Renesas Electronics America Inc
RJK0354DSP-00#J0
Infineon Technologies
BSS84PW L6327
Texas Instruments
TPIC2322LD
Infineon Technologies
IRLR3105TRLPBF
Vishay Siliconix
SQ2361EES-T1-GE3
Vishay Siliconix
IRFBC20STRL
STMicroelectronics
STD17NF03L-1
onsemi
NVMFS6B25NLT3G
IXYS