RFA100N05E
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$5.22
Available to order
Reference Price (USD)
1+
$5.22000
500+
$5.1678
1000+
$5.1156
1500+
$5.0634
2000+
$5.0112
2500+
$4.959
Exquisite packaging
Discount
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Experience the power of RFA100N05E, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RFA100N05E is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 240W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-218-5
- Package / Case: TO-218-5
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