2SK3433(0)-Z-E1-AZ
Renesas
Renesas
2SK3433 - SWITCHING P-CHANNEL PO
$1.23
Available to order
Reference Price (USD)
1+
$1.22791
500+
$1.2156309
1000+
$1.2033518
1500+
$1.1910727
2000+
$1.1787936
2500+
$1.1665145
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose 2SK3433(0)-Z-E1-AZ by Renesas. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with 2SK3433(0)-Z-E1-AZ inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 47W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263, TO-220SMD
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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